Yuanjie Lv - Concepedia

Author

Yuanjie Lv

Hebei Semiconductor Research Institute ORCID

Also Known As

Li,Yuanjie, Lisen Zhang, Y J Lv, Y. J. Lv, Y.J. Lv, Yanbei Lv, Yanping Lv, Yanyan Lv, Yuan-Jie Lv, YuanJie Lv

141

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

Hebei Semiconductor Research Institute Shandong University Chinese Academy of Sciences University of Science and Technology of China Xidian University

About

Yuanjie Lv is an author at Hebei Semiconductor Research Institute specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	47	2.1K
2	Applied Physics	27	46	2.1K
3	Electrical Engineering	27	42	1.9K
4	Materials Science	8	8	356
5	Materials Engineering	7	7	375

Yuanjie Lv

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm<sup>2</sup> or a 5A/700 V Handling Capabilities Yuanjie Lv, Yuangang Wang, Xingchang Fu, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorEngineeringWide-bandgap P-type NioxBreakdown VoltageSemiconductor Device	2020	156
High-Performance Vertical $\beta$ -Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Implanted Edge Termination Hong Zhou, Qian Feng, Jing Ning, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Voltage Engineering	2019	143
2.41 kV Vertical P-Nio/n-Ga <sub>2</sub> O <sub>3</sub> Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm <sup>2</sup> Hehe Gong, Yuanjie Lv, Xingchang Fu, IEEE Transactions on Power Electronics	2021	140
Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs With High Power Figure of Merit of 277 MW/cm<sup>2</sup> Yuanjie Lv, Hongyu Liu, Xingye Zhou, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2020	132
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings Hehe Gong, Xinxin Yu, Yang Xu, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2021	120
Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 Yuanjie Lv, Xingye Zhou, Shibing Long, IEEE Electron Device Letters SemiconductorsMaterials EngineeringElectrical EngineeringMaterials ScienceSub Xmlns	2018	103
Comprehensively Improved Performance of β-Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms L. X. Qian, Zhiwen Gu, Xiaodong Huang, ACS Applied Materials & Interfaces	2021	90
High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Vertical Schottky Barrier Diode With Thermally-Oxidized Termination Yuangang Wang, Shujun Cai, Ming Liu, IEEE Electron Device Letters Materials EngineeringThermal Oxidation TreatmentElectrical EngineeringElectronic DevicesEngineering	2019	84
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage Zhuangzhuang Hu, Yuanjie Lv, Chunyong Zhao, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineeringPlasma Electronics	2020	81
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors Chongbiao Luan, Zhaojun Lin, Yuanjie Lv, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2014	77

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