Concepedia

Yuanjie Lv

YL

64

Publications

2.6K

Citations

30

H-Index

2011

Active since

Affiliations

Hebei Semiconductor Research Institute(Current)

Shandong University

Chinese Academy of Sciences

University of Science and Technology of China

Xidian University

Yuanjie Lv is an author at Hebei Semiconductor Research Institute specializing in engineering, electrical engineering, and applied physics.

ORCID

Top concepts

Publications per year

2011–2024

64

Publications

64

Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm<sup>2</sup> or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 156 citations

, , +16

High-Performance Vertical $\beta$ -Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diode With Implanted Edge Termination

Hong Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters · 2019 · 143 citations

, , +11

2.41 kV Vertical P-Nio/n-Ga <sub>2</sub> O <sub>3</sub> Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm <sup>2</sup>

Hehe Gong, Yuanjie Lv, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2021 · 140 citations

Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs With High Power Figure of Merit of 277 MW/cm<sup>2</sup>

Yuanjie Lv, Hongyu Liu, Xingye Zhou et al. · IEEE Electron Device Letters · 2020 · 132 citations

, , +12

β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Hehe Gong, Xinxin Yu, Yang Xu et al. · Applied Physics Letters · 2021 · 120 citations

, , +12

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