Yuanjie Lv

Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 161 citations

Engineering, Electrical Engineering, Materials Science +16

High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination

Hong Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters · 2019 · 150 citations

Engineering, Electrical Engineering, Materials Engineering +14

2.41 kV Vertical P-Nio/n-Ga ₂ O ₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm ²

Hehe Gong, Yuanjie Lv, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2021 · 143 citations

Engineering, Electrical Engineering, Materials Science +12

Lateral β-Ga₂O₃ MOSFETs With High Power Figure of Merit of 277 MW/cm²

Yuanjie Lv, Hongyu Liu, Xingye Zhou et al. · IEEE Electron Device Letters · 2020 · 139 citations

Engineering, Electrical Engineering, Materials Science +13

β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings

Hehe Gong, Xinxin Yu, Yang Xu et al. · Applied Physics Letters · 2021 · 126 citations

Engineering, Electrical Engineering, Materials Science +17