Xingye Zhou - Concepedia

Author

Xingye Zhou

Hebei Semiconductor Research Institute

Also Known As

X Y Zhou, X. Y. Zhou, Xing-Ye Zhou, Xingye Zhou, Xingye zhou

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Hebei Semiconductor Research Institute University of Science and Technology of China Chinese Academy of Sciences Xidian University Institute of Microelectronics

About

Xingye Zhou is an author at Hebei Semiconductor Research Institute specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	21	914
2	Electrical Engineering	16	20	887
3	Applied Physics	14	18	841
4	Computer Engineering	1	1	24
5	Computer Science	1	1	24

Xingye Zhou

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm<sup>2</sup> or a 5A/700 V Handling Capabilities Yuanjie Lv, Yuangang Wang, Xingchang Fu, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorEngineeringWide-bandgap P-type NioxBreakdown VoltageSemiconductor Device	2020	156
2.41 kV Vertical P-Nio/n-Ga <sub>2</sub> O <sub>3</sub> Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm <sup>2</sup> Hehe Gong, Yuanjie Lv, Xingchang Fu, IEEE Transactions on Power Electronics	2021	140
Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs With High Power Figure of Merit of 277 MW/cm<sup>2</sup> Yuanjie Lv, Hongyu Liu, Xingye Zhou, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2020	132
Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 Yuanjie Lv, Xingye Zhou, Shibing Long, IEEE Electron Device Letters SemiconductorsMaterials EngineeringElectrical EngineeringMaterials ScienceSub Xmlns	2018	103
High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Vertical Schottky Barrier Diode With Thermally-Oxidized Termination Yuangang Wang, Shujun Cai, Ming Liu, IEEE Electron Device Letters Materials EngineeringThermal Oxidation TreatmentElectrical EngineeringElectronic DevicesEngineering	2019	84
Enhancement‐Mode <i>β</i>‐Ga<sub>2</sub>O<sub>3</sub> Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing Yuanjie Lv, Xingye Zhou, Shibing Long, physica status solidi (RRL) - Rapid Research Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringOxygen AnnealingEngineering	2019	74
Oxygen annealing impact on <b> <i>β</i> </b>-Ga2O3 MOSFETs: Improved pinch-off characteristic and output power density Yuanjie Lv, Hongyu Liu, Yuangang Wang, Applied Physics Letters Continuous WaveSemiconductor TechnologyElectrical EngineeringOutput Power DensityEngineering	2020	35
Lateral source field-plated <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm <sup>2</sup> Yuanjie Lv, Xingye Zhou, Shibing Long, Semiconductor Science and Technology	2019	33
Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs Yuanjie Lv, Jianghui Mo, Xubo Song, Superlattices and Microstructures Semiconductor TechnologyElectrical EngineeringEngineeringOxide ElectronicsGate Recess	2018	32
Large-Area 4H-SiC Ultraviolet Avalanche Photodiodes Based on Variable-Temperature Reflow Technique Xingye Zhou, Tingting Han, Yuanjie Lv, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringShort Wavelength OpticEngineeringElectronic Engineering	2018	31

Page 1