Yuangang Wang

Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 156 citations

Wide-bandgap Semiconductor, Engineering, Wide-bandgap P-type Niox +16

Lateral β-Ga₂O₃ MOSFETs With High Power Figure of Merit of 277 MW/cm²

Yuanjie Lv, Hongyu Liu, Xingye Zhou et al. · IEEE Electron Device Letters · 2020 · 132 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12

Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

Yuanjie Lv, Xingye Zhou, Shibing Long et al. · IEEE Electron Device Letters · 2018 · 103 citations

Semiconductors, Materials Engineering, Electrical Engineering +14

High-Voltage ($\overline{\text{2}}01$ ) $\beta$ -Ga₂O₃ Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

Yuangang Wang, Shujun Cai, Ming Liu et al. · IEEE Electron Device Letters · 2019 · 84 citations

Materials Engineering, Thermal Oxidation Treatment, Electrical Engineering +13

Enhancement‐Mode <i>β</i>‐Ga₂O₃ Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing

Yuanjie Lv, Xingye Zhou, Shibing Long et al. · physica status solidi (RRL) - Rapid Research Letters · 2019 · 74 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12