Concepedia

Shujun Cai

SC

45

Publications

1.9K

Citations

27

H-Index

2003

Active since

Affiliations

Hebei Semiconductor Research Institute(Current)

Hong Kong University of Science and Technology

University of Science and Technology of China

Chinese Academy of Sciences

Institute of Microelectronics

Shujun Cai is an author at Hebei Semiconductor Research Institute specializing in engineering, electrical engineering, and applied physics.

ORCID

Top concepts

Publications per year

2003–2023

45

Publications

45

Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm<sup>2</sup> or a 5A/700 V Handling Capabilities

Yuanjie Lv, Yuangang Wang, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2020 · 156 citations

, , +16

2.41 kV Vertical P-Nio/n-Ga <sub>2</sub> O <sub>3</sub> Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm <sup>2</sup>

Hehe Gong, Yuanjie Lv, Xingchang Fu et al. · IEEE Transactions on Power Electronics · 2021 · 140 citations

Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs With High Power Figure of Merit of 277 MW/cm<sup>2</sup>

Yuanjie Lv, Hongyu Liu, Xingye Zhou et al. · IEEE Electron Device Letters · 2020 · 132 citations

, , +12

Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2

Yuanjie Lv, Xingye Zhou, Shibing Long et al. · IEEE Electron Device Letters · 2018 · 103 citations

, , +14

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

Zhihong Feng, Cui Yu, J. Li et al. · Carbon · 2014 · 90 citations

, , +6

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