Shixiong Liang - Concepedia

Author

Shixiong Liang

Hebei Semiconductor Research Institute ORCID

Also Known As

S. Liang, S. X. Liang, Shaobo Dun, Shi-Xiong LIANG, Shi-Xiong Liang, ShiXiong Liang, Shixiong LIANG, Shixiong Liang, Song Wang, shixiong liang

193

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

Hebei Semiconductor Research Institute University of Electronic Science and Technology of China Chinese Academy of Sciences Xi'an Jiaotong University University of Michigan

About

Shixiong Liang is an author at Hebei Semiconductor Research Institute specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	40	2.3K
2	Applied Physics	27	36	2.1K
3	Natural Sciences	2	2	67
4	Biomedical Engineering	1	1	90
5	Chemical Engineering	1	1	38

Shixiong Liang

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure Yaxin Zhang, Shen Qiao, Shixiong Liang, Nano Letters Thz PhotonicsTerahertz TechnologyEngineeringMetamaterialsComposite Metamaterial	2015	238
Dynamic Photoinduced Controlling of the Large Phase Shift of Terahertz Waves via Vanadium Dioxide Coupling Nanostructures Yuncheng Zhao, Yaxin Zhang, Qiwu Shi, ACS Photonics Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsTerahertz Physics	2018	163
Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm<sup>2</sup> or a 5A/700 V Handling Capabilities Yuanjie Lv, Yuangang Wang, Xingchang Fu, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorEngineeringWide-bandgap P-type NioxBreakdown VoltageSemiconductor Device	2020	156
2.41 kV Vertical P-Nio/n-Ga <sub>2</sub> O <sub>3</sub> Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm <sup>2</sup> Hehe Gong, Yuanjie Lv, Xingchang Fu, IEEE Transactions on Power Electronics	2021	140
Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs With High Power Figure of Merit of 277 MW/cm<sup>2</sup> Yuanjie Lv, Hongyu Liu, Xingye Zhou, IEEE Electron Device Letters Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2020	132
Real-time programmable metasurface for terahertz multifunctional wave front engineering Feng Lan, Luyang Wang, Hongxin Zeng, Light Science & Applications	2023	130
Large phase modulation of THz wave via an enhanced resonant active HEMT metasurface Yaxin Zhang, Yuncheng Zhao, Shixiong Liang, Nanophotonics Thz PhotonicsTerahertz TechnologyEngineeringMetamaterial UnitMetasurfaces	2018	117
A Novel 220-GHz GaN Diode On-Chip Tripler With High Driven Power Bo Zhang, Dongfeng Ji, Deng Fang, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringDiode ChainRf Semiconductor	2019	104
Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 Yuanjie Lv, Xingye Zhou, Shibing Long, IEEE Electron Device Letters SemiconductorsMaterials EngineeringElectrical EngineeringMaterials ScienceSub Xmlns	2018	103
High-precision digital terahertz phase manipulation within a multichannel field perturbation coding chip Hongxin Zeng, Huajie Liang, Yaxin Zhang, Nature Photonics PhotonicsElectrical EngineeringTerahertz SpectroscopyEngineeringHigh-frequency Device	2021	95

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