Peng Cui

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Peng Cui, Huan Liu, Wei Lin et al. · IEEE Transactions on Electron Devices · 2017 · 57 citations

Polarization Charge Distribution, Wide-bandgap Semiconductor, Electrical Engineering +12

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Ming Yang, Zhaojun Lin, Jingtao Zhao et al. · IEEE Transactions on Electron Devices · 2016 · 55 citations

Polarization Charge Distribution, Wide-bandgap Semiconductor, Electrical Engineering +11

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

Ming Yang, Yuanjie Lv, Zhihong Feng et al. · IEEE Transactions on Electron Devices · 2016 · 20 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Peng Cui, Jianghui Mo, Fu Chen et al. · Scientific Reports · 2018 · 19 citations · Full text

Wide-bandgap Semiconductor, Additional Polarization Charges, Electrical Engineering +13

Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs

Mingyan Wang, Yuanjie Lv, Zuokai Wen et al. · IEEE Electron Device Letters · 2022 · 17 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13