Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Abstract

The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of the Hamiltonian of the system and the additional polarization charges, two methods to calculate PCF scattering by the scattering theory were presented. By comparing the measured and calculated source-drain resistances, the effect of the different gate lengths on the PCF scattering potential was confirmed.