Chongbiao Luan

Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin, Yu Zhang et al. · Applied Physics Letters · 2011 · 86 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Chongbiao Luan, Zhaojun Lin, Yuanjie Lv et al. · Journal of Applied Physics · 2014 · 77 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Yuanjie Lv, Zhaojun Lin, T. D. Corrigan et al. · Journal of Applied Physics · 2011 · 66 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS₂ by proximity coupling with a ferromagnetic MnO₂ monolayer

Baozeng Zhou, Zheng Li, Jiaming Wang et al. · Nanoscale · 2019 · 65 citations

Engineering, Magnetic Materials, Magnetoresistance +18

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Peng Cui, Huan Liu, Wei Lin et al. · IEEE Transactions on Electron Devices · 2017 · 57 citations

Polarization Charge Distribution, Wide-bandgap Semiconductor, Electrical Engineering +12