Concepedia

Jianghui Mo

JM

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Publications

4

Citations

85

H-Index

4

Active since

2014

Affiliations

Hebei Semiconductor Research Institute(Current)

Jianghui Mo is an author at Hebei Semiconductor Research Institute specializing in engineering, semiconductor materials, and electrical engineering.

Publications per year

2014–2020

4

Publications

4

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

Yuanjie Lv, Jianghui Mo, Xubo Song et al. · Superlattices and Microstructures · 2018 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K compound passivation

Jiangfeng Du, Nanting Chen, Peilin Pan et al. · Electronics Letters · 2014 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Peng Cui, Jianghui Mo, Fu Chen et al. · Scientific Reports · 2018 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Study on the effect of diamond layer on the performance of double-channel AlGaN/GaN HEMTs

Tian Zhu, Yanrong Cao, Chong Wang et al. · Semiconductor Science and Technology · 2020 · 14 citations

Engineering, Electrical Engineering, Materials Science +14

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