Ming Yang

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Peng Cui, Huan Liu, Wei Lin et al. · IEEE Transactions on Electron Devices · 2017 · 57 citations

Engineering, Electrical Engineering, Materials Engineering +17

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Ming Yang, Zhaojun Lin, Jingtao Zhao et al. · IEEE Transactions on Electron Devices · 2016 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

Ming Yang, Yuanjie Lv, Zhihong Feng et al. · IEEE Transactions on Electron Devices · 2016 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Jingtao Zhao, Zhaojun Lin, Chongbiao Luan et al. · Applied Physics Letters · 2014 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Ming Yang, Yuanjie Lv, Zhihong Feng et al. · Journal of Applied Physics · 2016 · 16 citations

Engineering, Electrical Engineering, Materials Science +17