Yang Liu

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Zhe Xü, Jinyan Wang, Yang Liu et al. · IEEE Electron Device Letters · 2013 · 93 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Yiqiang Ni, Zhiyuan He, Fan Yang et al. · Japanese Journal of Applied Physics · 2014 · 41 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Aln/gan Sls +17

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Liuan Li, Wenjing Wang, Liang He et al. · Materials Science in Semiconductor Processing · 2017 · 40 citations

Materials Engineering, Materials Science, Electrical Engineering +7

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Yao Yao, Zhiyuan He, Fan Yang et al. · Applied Physics Express · 2013 · 38 citations

Al2o3/gan Interface, Recessed Gate, Electrical Engineering +9

Enhancement-mode AlGaN/GaN heterostructure field effect transistors fabricated by selective area growth technique

Yuhua Wen, Zhiyuan He, Jialin Li et al. · Applied Physics Letters · 2011 · 34 citations

Plasma Treatment Damage, Wide-bandgap Semiconductor, Electrical Engineering +11