Yiqiang Ni

Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Yibin Yang, Peng Xiang, Minggang Liu et al. · Journal of Crystal Growth · 2013 · 49 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Yiqiang Ni, Zhiyuan He, Fan Yang et al. · Japanese Journal of Applied Physics · 2014 · 41 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Aln/gan Sls +17

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Yao Yao, Zhiyuan He, Fan Yang et al. · Applied Physics Express · 2013 · 38 citations

Al2o3/gan Interface, Recessed Gate, Electrical Engineering +9

Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Ya Li, Yanli Pei, Ruiqin Hu et al. · IEEE Transactions on Electron Devices · 2015 · 36 citations

Materials Science, Non-volatile Memory, Electrical Engineering +14

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Yao Yao, Jian Zhong, Yue Zheng et al. · Japanese Journal of Applied Physics · 2014 · 35 citations

Semiconductors, Trap-assisted Tunneling, Electrical Engineering +14