Zhiyuan He

Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Yibin Yang, Peng Xiang, Minggang Liu et al. · Journal of Crystal Growth · 2013 · 49 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +8

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Yiqiang Ni, Zhiyuan He, Fan Yang et al. · Japanese Journal of Applied Physics · 2014 · 41 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Aln/gan Sls +17

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Yao Yao, Zhiyuan He, Fan Yang et al. · Applied Physics Express · 2013 · 38 citations

Al2o3/gan Interface, Recessed Gate, Electrical Engineering +9

High-pressure synthesis of single-phase superconductors HgzSrxBa2−xCa2Cu3O8+δ and (Hg, M)Sr2Ca2Cu3Oy with MPb and Mo

Zhiyuan He, Q. M. Lin, Li Gao et al. · Physica C Superconductivity · 1995 · 37 citations

Novel combination of histone methylation modulators with therapeutic synergy against acute myeloid leukemia in vitro and in vivo

Shijun Wen, Jiankang Wang, Panpan Liu et al. · Cancer Letters · 2017 · 37 citations

Histone Modifications, Chromatin, Therapeutic Synergy +11