Jialin Zhang

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Liuan Li, Wenjing Wang, Liang He et al. · Materials Science in Semiconductor Processing · 2017 · 40 citations

Materials Engineering, Materials Science, Electrical Engineering +7

High-Mobility Normally OFF Al₂O₃/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

Jialin Zhang, Liang He, Liuan Li et al. · IEEE Electron Device Letters · 2018 · 32 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic <i>R</i> _ON characteristics of AlGaN/GaN HEMTs

Liang He, Liuan Li, Yue Zheng et al. · physica status solidi (a) · 2017 · 20 citations

Semiconductors, Al Composition, Electrical Engineering +11

Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs

Liang He, Liuan Li, Fan Yang et al. · Applied Surface Science · 2020 · 19 citations

Electrical Engineering, Engineering, Applied Physics +5

Rapid interrogation of special nuclear materials by combining scattering and transmission nuclear resonance fluorescence spectroscopy

Haoyang Lan, Tan Song, Jialin Zhang et al. · Nuclear Science and Techniques · 2021 · 12 citations

Natural Sciences, Spectroscopy, Dynamic Nuclear Polarization +7