Liang He

Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application

Liuan Li, Wenjing Wang, Liang He et al. · Materials Science in Semiconductor Processing · 2017 · 40 citations

Materials Engineering, Materials Science, Electrical Engineering +7

High-Mobility Normally OFF Al₂O₃/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

Jialin Zhang, Liang He, Liuan Li et al. · IEEE Electron Device Letters · 2018 · 32 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al₂O₃/AlN/GaN MISFET by Selective Area Growth

Liang He, Fan Yang, Liuan Li et al. · IEEE Transactions on Electron Devices · 2017 · 30 citations

Semiconductors, Aluminium Nitride, Electrical Engineering +15

Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis

Deqiu Zhou, Yiqiang Ni, Zhiyuan He et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2016 · 27 citations

Carbon Impurity, Wide-bandgap Semiconductor, Electrical Engineering +12

Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors

Liuan Li, Jia Chen, Zhenxing Liu et al. · Applied Surface Science · 2019 · 26 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6