Deqiu Zhou

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Yiqiang Ni, Zhiyuan He, Fan Yang et al. · Japanese Journal of Applied Physics · 2014 · 41 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Aln/gan Sls +17

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Yao Yao, Jian Zhong, Yue Zheng et al. · Japanese Journal of Applied Physics · 2014 · 35 citations

Semiconductors, Trap-assisted Tunneling, Electrical Engineering +14

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al₂O₃/AlN/GaN MISFET by Selective Area Growth

Liang He, Fan Yang, Liuan Li et al. · IEEE Transactions on Electron Devices · 2017 · 30 citations

Semiconductors, Aluminium Nitride, Electrical Engineering +15

Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis

Deqiu Zhou, Yiqiang Ni, Zhiyuan He et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2016 · 27 citations

Carbon Impurity, Wide-bandgap Semiconductor, Electrical Engineering +12

Influence of the carbon-doping location on the material and electrical properties of a AlGaN/GaN heterostructure on Si substrate

Yiqiang Ni, Deqiu Zhou, Zijun Chen et al. · Semiconductor Science and Technology · 2015 · 18 citations

Materials Engineering, Top Gan Buffer, Electrical Engineering +13