Ying Jiang

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wang, Ying Jiang, Takahiro Miyashita et al. · Solid-State Electronics · 2014 · 29 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +7

Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

Liuan Li, Akinori Kishi, Takayuki Shiraishi et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2014 · 24 citations

Aluminium Nitride, Engineering, Thin Film Process Technology +20

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Ying Jiang, Qingpeng Wang, Fuzhe Zhang et al. · Applied Surface Science · 2015 · 18 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +6

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Liuan Li, Ryosuke Nakamura, Qingpeng Wang et al. · Nanoscale Research Letters · 2014 · 16 citations · Full text

Materials Science, Semiconductor Technology, Electrical Engineering +8

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

Qingpeng Wang, Ying Jiang, Jiaqi Zhang et al. · Semiconductor Science and Technology · 2015 · 16 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11