Jinyan Wang

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Ye Wang, Maojun Wang, Bing Xie et al. · IEEE Electron Device Letters · 2013 · 178 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Shenghou Liu, Yong Cai, Guodong Gu et al. · IEEE Electron Device Letters · 2012 · 112 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

Rumin Gong, Jinyan Wang, Shenghou Liu et al. · Applied Physics Letters · 2010 · 108 citations

Materials Science, Aluminium Nitride, Electrical Engineering +13

Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

Zhe Xü, Jinyan Wang, Yang Liu et al. · IEEE Electron Device Letters · 2013 · 93 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

900 V/1.6 <inline-formula> <tex-math notation="TeX">${\rm m}\Omega\cdot{\rm cm}^{2}$ </tex-math></inline-formula> Normally Off <inline-formula> <tex-math notation="TeX">${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ </tex-math></inline-formula> MOSFET on Silicon Substrate

Maojun Wang, Ye Wang, Chuan Zhang et al. · IEEE Transactions on Electron Devices · 2014 · 83 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11