Maojun Wang

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Ye Wang, Maojun Wang, Bing Xie et al. · IEEE Electron Device Letters · 2013 · 180 citations

Engineering, Electrical Engineering, Materials Science +17

Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · IEEE Electron Device Letters · 2014 · 116 citations

Engineering, Electrical Engineering, Materials Science +15

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Transactions on Electron Devices · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Engineering +17

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Maojun Wang, Kevin J. Chen · IEEE Electron Device Letters · 2011 · 113 citations

Engineering, Electrical Engineering, Materials Science +17

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Shenghou Liu, Shu Yang, Zhikai Tang et al. · Applied Physics Letters · 2015 · 105 citations

Engineering, Materials Engineering, Materials Science +17