M. A. Moram - Concepedia

Author

M. A. Moram

Also Known As

M A Moram, M. A. Moram, M. Moram, M.A. Moram, Michelle A Moram, Michelle A. Moram, Michelle Moram, Moram, Michelle A., Moram, Michelle Anna

101

Publications

4.1K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge Imperial College London University of Liverpool University of Manchester Indian Institute of Technology Bombay

About

M. A. Moram is an author at University of Cambridge specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	57	3.7K
2	Applied Physics	28	55	3.6K
3	Electrical Engineering	8	8	1.4K
4	Chemistry	3	3	128
5	Chemical Engineering	2	2	80

M. A. Moram

Publications

3.9K

Citations

H-Index

Page 1

	Year	Citations
X-ray diffraction of III-nitrides M. A. Moram, M. E. Vickers Reports on Progress in Physics Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsEngineering	2009	1K
Piezoelectric coefficients and spontaneous polarization of ScAlN A. Miguel, Siyuan Zhang, Tommi Riekkinen, Journal of Physics Condensed Matter EngineeringMechanical EngineeringPiezoelectric CoefficientsPiezoelectric ResonatorPolariton Dynamic	2015	337
ScGaN and ScAlN: emerging nitride materials M. A. Moram, Sen Zhang Journal of Materials Chemistry A Wide-bandgap SemiconductorEngineeringCubic Boron NitrideScgan AlloysOptoelectronic Devices	2014	141
Elastic constants and critical thicknesses of ScGaN and ScAlN S. Zhang, Wai Yuen Fu, David Holec, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringMechanical EngineeringSc0.375ga0.625 NElasticity (Physics)	2013	139
Understanding x-ray diffraction of nonpolar gallium nitride films M. A. Moram, Carol Johnston, J. L. Hollander, Journal of Applied Physics Materials ScienceMaterials EngineeringWide-bandgap SemiconductorX-ray SpectroscopyXrd Data	2009	139
On the origin of threading dislocations in GaN films M. A. Moram, C. S. Ghedia, D.V. Sridhara Rao, Journal of Applied Physics Materials ScienceSemiconductorsUniform LuminescenceWide-bandgap SemiconductorEngineering	2009	126
Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction M. A. Moram, Z. H. Barber, C. J. Humphreys Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorAccurate Poisson ’Epitaxial GrowthEngineering	2007	98
The effect of oxygen incorporation in sputtered scandium nitride films M. A. Moram, Z. H. Barber, C. J. Humphreys Thin Solid Films Materials ScienceMaterials EngineeringEngineeringSurface ScienceApplied Physics	2008	88
Dislocation reduction in gallium nitride films using scandium nitride interlayers M. A. Moram, Yuchen Zhang, Menno J. Kappers, Applied Physics Letters Materials ScienceGan TemplateDislocation DensitiesEngineeringDislocation Interaction	2007	83
On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors Mikael Råsander, M. A. Moram The Journal of Chemical Physics	2015	82

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