Publication | Closed Access
ScGaN and ScAlN: emerging nitride materials
141
Citations
85
References
2014
Year
Wide-bandgap SemiconductorEngineeringCubic Boron NitrideScgan AlloysOptoelectronic DevicesBand GapWide Band-gap SemiconductorsSemiconductorsNanoelectronicsWide-bandgap SemiconductorsMaterials ScienceMaterials EngineeringElectrical EngineeringPhysicsAluminum Gallium NitrideMicroelectronicsCategoryiii-v SemiconductorMicrostructureApplied PhysicsGan Power DeviceOptoelectronics
ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.
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