J. L. Hollander

Understanding x-ray diffraction of nonpolar gallium nitride films

M. A. Moram, Carol Johnston, J. L. Hollander et al. · Journal of Applied Physics · 2009 · 139 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +15

Improvements in a-plane GaN crystal quality by a two-step growth process

J. L. Hollander, M. J. Kappers, C. McAleese et al. · Applied Physics Letters · 2008 · 102 citations

Wide-bandgap Semiconductor, Engineering, Lateral Growth +18

Growth and characterisation of semi-polar InGaN/GaN MQW structures

Menno J. Kappers, J. L. Hollander, C. McAleese et al. · Journal of Crystal Growth · 2006 · 67 citations

Electrical Engineering, Engineering, Applied Physics +4

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Carol Johnston, Menno J. Kappers, M. A. Moram et al. · Journal of Crystal Growth · 2009 · 56 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +9

Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates

T. J. Badcock, P. Dawson, Menno J. Kappers et al. · Applied Physics Letters · 2008 · 35 citations

Semiconductors, Wide-bandgap Semiconductor, Optical Materials +15