Understanding x-ray diffraction of nonpolar gallium nitride films

M. A. Moram, Carol Johnston, J. L. Hollander, +2

Journal of Applied Physics

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorX-ray SpectroscopyXrd Data +13

Improvements in a-plane GaN crystal quality by a two-step growth process

J. L. Hollander, M. J. Kappers, C. McAleese, +1

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringLateral GrowthEpitaxial GrowthMaterials Engineering +16

Growth and characterisation of semi-polar InGaN/GaN MQW structures

Menno J. Kappers, J. L. Hollander, C. McAleese, +5

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsQuantum MaterialsAluminum Gallium Nitride +2

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

Carol Johnston, Menno J. Kappers, M. A. Moram, +2

Journal of Crystal Growth

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringDefect Reduction Methods +7

Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates

T. J. Badcock, P. Dawson, Menno J. Kappers, +6

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorOptical MaterialsEngineeringPhotoluminescence +13

Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates

T. J. Badcock, P. Dawson, Menno J. Kappers, +6

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesExciton Features +17

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

M. Häberlen, T. J. Badcock, M. A. Moram, +5

Journal of Applied Physics

Materials ScienceSemiconductorsNonpolar Gan GrownWide-bandgap SemiconductorPoint Defects +13

Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire

Carol Johnston, Menno J. Kappers, M. A. Moram, +2

physica status solidi (a)

Wide-bandgap SemiconductorEngineeringSemiconductorsQuantum MaterialsEpitaxial Growth +14

Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures

Nicholas P. Hylton, P. Dawson, Carol Johnston, +4

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemi‐polar StructuresSemiconductors +19

Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering

M. E. Vickers, J. L. Hollander, C. McAleese, +3

Journal of Applied Physics

Materials ScienceNon-polar Iii-nitride FilmsAluminium NitrideRepeat ThicknessEngineering +13