M. J. Kappers - Concepedia

Author

M. J. Kappers

University of Cambridge

Also Known As

Kappers, M. J., M J Kappers, M J. Kappers, M Kappers, M. J. Kappers, M. Kappers, M.J Kappers, M.J. Kappers, MJ Kappers

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge University of Manchester University of Oxford Utrecht University Cambridge Scientific (United States)

About

M. J. Kappers is an author at University of Cambridge specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	24	1K
2	Applied Physics	17	22	767
3	Chemistry	4	4	300
4	Natural Sciences	3	3	97
5	Chemical Engineering	2	2	253

M. J. Kappers

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Correlation between CO frequency and Pt coordination number. A DRIFT study on supported Pt catalysts M. J. Kappers, J.H. van der Maas Catalysis Letters Materials ScienceInorganic ChemistryChemical EngineeringCo FrequencyEngineering	1991	203
Understanding x-ray diffraction of nonpolar gallium nitride films M. A. Moram, Carol Johnston, J. L. Hollander, Journal of Applied Physics Materials ScienceMaterials EngineeringWide-bandgap SemiconductorX-ray SpectroscopyXrd Data	2009	139
Improvements in a-plane GaN crystal quality by a two-step growth process J. L. Hollander, M. J. Kappers, C. McAleese, Applied Physics Letters Wide-bandgap SemiconductorEngineeringLateral GrowthEpitaxial GrowthMaterials Engineering	2008	102
Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers Carol Johnston, M. A. Moram, M. J. Kappers, Applied Physics Letters Wide-bandgap SemiconductorEngineeringQuantum MaterialsMaterials ScienceElectrical Engineering	2009	57
Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes R. Charash, Pleun Maaskant, Liam Lewis, Applied Physics Letters Carrier DistributionEngineeringLuminescence PropertyTriple QuantumLight-emitting Diodes	2009	52
Deconvolution and Curve Fitting of IR Spectra for CO Adsorbed on Pt/K-LTL: Potassium Promoter Effect and Adsorption Site Distribution M. J. Kappers, Jeffrey T. Miller, D.C. Koningsberger The Journal of Physical Chemistry EngineeringPotassium Promoter EffectChemistryAdsorption Site DistributionSpectra-structure Correlation	1996	50
Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method Carol Johnston, M. J. Kappers, C. J. Humphreys Journal of Applied Physics Wide-bandgap SemiconductorEngineeringHigh PressureMicrostructural EvolutionMolecular Beam Epitaxy	2009	49
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers M. A. Moram, Carol Johnston, M. J. Kappers, Journal of Crystal Growth Semiconductor TechnologyWide-bandgap SemiconductorPhysicsApplied PhysicsAluminum Gallium Nitride	2009	45
The influence of coalescence time on unintentional doping in GaN/sapphire Subhankar Das Bakshi, Joy Sumner, M. J. Kappers, Journal of Crystal Growth Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2008	42
Dielectric response of wurtzite gallium nitride in the terahertz frequency range Morgan T. Hibberd, V. Frey, Ben F. Spencer, Solid State Communications	2016	33

Page 1