IEEE Transactions on Electron Devices · 2019 · 26 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCharge TrapsDefect DensityFermi LevelFermi Level PinningFermi SurfaceLeakageLeakage Current ModelingTrapping Effects
It is shown that an EC-0.90 eV trap in commercial AlGaN/GaN MISHEMTs grown on a Si (111) substrate is responsible for a -1.8-V threshold voltage (VT) instability using a combination of defect spectroscopy and doublepulsed current-voltage measurements. The EC - 0.90 eV trap is located in the GaN buffer and is emptied by high drain biases in pinch-off, which raises the trap above the Fermi level in the GaN buffer. This trap also exhibits both fast and slow recovery processes that are explained by the availabilityof free electrons throughout the depth of the GaN buffer and the trapping process that depletes the free electron concentration. TCAD modeling is used to demonstrate this process and also to show why there is not a significant increase in buffer leakage current after the large negative VT shift due to this trap. This demonstrates that optimizing buffer designs are critical for ideal device performance.
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Wataru Saito, T. Nitta, Yorito Kakiuchi et al. · IEEE Transactions on Electron Devices · 2007 · 227 citations