Leakage Current Modeling

Leakage Current Modeling is a computational framework that characterizes the unintended subthreshold and gate leakage currents in semiconductor devices under varying process, voltage, and temperature conditions to enable accurate prediction and optimization of static power dissipation in nanoscale integrated circuits.

1.3K

Publications

50.8K

Citations

4.2K

Authors

859

Institutions

Publications per year

2017–2026

202

Authors

4.2K

  1. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    32 publications · 2.3K citations

    21

    h-index

  2. CH
    Chenming Hu

    University of California, Berkeley, United States

    20 publications · 1.3K citations

    14

    h-index

  3. LL
    Luca Larcher

    University of Modena and Reggio Emilia, Italy

    16 publications · 1K citations

    14

    h-index

  4. GG
    G. Ghibaudo

    Institut de Microélectronique, Electromagnétisme et Photonique, France

    14 publications · 301 citations

    12

    h-index

  5. AS
    Alessandro S. Spinelli

    Politecnico di Milano, Italy

    14 publications · 512 citations

    12

    h-index

1–5 of 4.2K

Venues

  1. IEEE Transactions on Electron Devices

    177 publications · 8.9K citations

    53

    h-index

  2. IEEE Electron Device Letters

    55 publications · 2.7K citations

    27

    h-index

  3. Applied Physics Letters

    49 publications · 2.7K citations

    27

    h-index

  4. Solid-State Electronics

    75 publications · 2.5K citations

    26

    h-index

  5. Journal of Applied Physics

    53 publications · 3.1K citations

    26

    h-index

1–5