Leakage Current Modeling
Leakage Current Modeling is a computational framework that characterizes the unintended subthreshold and gate leakage currents in semiconductor devices under varying process, voltage, and temperature conditions to enable accurate prediction and optimization of static power dissipation in nanoscale integrated circuits.
1.3K
Publications
50.8K
Citations
4.2K
Authors
859
Institutions
Publications per year
2017–2026
202
1.3K
Kensuke Nishioka, Nobuhiro Sakitani, Yukiharu Uraoka et al. · Solar Energy Materials and Solar Cells · 2007 · 299 citations
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Institut de Microélectronique, Electromagnétisme et Photonique, France
14 publications · 301 citations
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University of California, Berkeley
Berkeley, United States
29 h-index
146 publications
9.6K citations
Intel (United States)
Santa Clara, United States
26 h-index
95 publications
5.6K citations
IBM (United States)
Armonk, United States
25 h-index
134 publications
7.9K citations
Purdue University West Lafayette
West Lafayette, United States
24 h-index
120 publications
9.3K citations
IMEC
Leuven, Belgium
24 h-index
162 publications
6K citations

National Yang Ming Chiao Tung University
Hsinchu, Taiwan
17 h-index
81 publications
2.3K citations
Massachusetts Institute of Technology
Cambridge, United States
16 h-index
54 publications
4.4K citations
Texas Instruments (United States)
Dallas, United States
16 h-index
57 publications
2.3K citations
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177 publications · 8.9K citations
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55 publications · 2.7K citations
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75 publications · 2.5K citations
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53 publications · 3.1K citations
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