D. J. Bartelink

Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

N. M. Johnson, D. J. Bartelink, R. B. Gold et al. · Journal of Applied Physics · 1979 · 104 citations · Full text

Semiconductors, Device Modeling, Electrical Engineering +15

Laser-induced crystallization of silicon islands on amorphous substrates: Multilayer structures

D. K. Biegelsen, N. M. Johnson, D. J. Bartelink et al. · Applied Physics Letters · 1981 · 82 citations

Optical Materials, Engineering, Optical Absorption +18

High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency

R.L. Johnston, D.L. Scharfetter, D. J. Bartelink · Proceedings of the IEEE · 1968 · 68 citations

Electrical Engineering, Pulsed Operation, Engineering +11

Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTS

N. M. Johnson, D. J. Bartelink, J.P. McVittie · Journal of Vacuum Science and Technology · 1979 · 52 citations

Engineering, Integrated Circuits, Silicon On Insulator +18

Use of short-loop electrical measurements for yield improvement

Crid Yu, T. Maung, Costas J. Spanos et al. · IEEE Transactions on Semiconductor Manufacturing · 1995 · 50 citations

Engineering, Measurement, Industrial Engineering +20