D.L. Scharfetter - Concepedia

Author

D.L. Scharfetter

NTT (Japan)

Also Known As

D. L. Scharfetter, D. Scharfetter, D.L. Scharfetter

Publications

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)Palo Alto Research Center University of California, Berkeley Stanford University Intel (United States)

About

D.L. Scharfetter is an author at NTT (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	28	3.9K
2	Applied Physics	16	22	3.2K
3	Education	1	1	2.2K
4	Social Sciences	1	1	22
5	Architectural Engineering	1	1	22

D.L. Scharfetter

Publications

3.9K

Citations

H-Index

Page 1

	Year	Citations
Large-signal analysis of a silicon Read diode oscillator D.L. Scharfetter, H.K. Gummel IEEE Transactions on Electron Devices EngineeringMeasurementEducationPower ElectronicsElectromagnetic Compatibility	1969	2.2K
BSIM: Berkeley short-channel IGFET model for MOS transistors B.J. Sheu, D.L. Scharfetter, P.K. Ko, IEEE Journal of Solid-State Circuits Device ModelingElectrical EngineeringEngineeringVlsi DesignNanoelectronics	1987	582
Minority carrier injection and charge storage in epitaxial Schottky barrier diodes D.L. Scharfetter Solid-State Electronics Semiconductor TechnologyElectrical EngineeringMinority Carrier InjectionEngineeringApplied Physics	1965	148
General optimization and extraction of IC device model parameters K. Doganis, D.L. Scharfetter IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringGeneral OptimizationEngineeringPhysical Design (Electronics)	1983	103
The Analysis of Radiation Effects in Semiconductor Junction Devices C. W. Gwyn, D.L. Scharfetter, Jochen Wirth IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringBipolar Transistor	1967	100
Device physics of TRAPATT oscillators B.C. DeLoach, D.L. Scharfetter IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsOscillatorsHigh-frequency Device	1970	99
Depletion-Layer Capacitance of <i>p</i>+<i>n</i> Step Junctions H.K. Gummel, D.L. Scharfetter Journal of Applied Physics Electrical EngineeringEngineeringPhysicsNanoelectronicsApplied Physics	1967	78
High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency R.L. Johnston, D.L. Scharfetter, D. J. Bartelink Proceedings of the IEEE Electrical EngineeringPulsed OperationEngineeringRf SemiconductorPhysics	1968	68
Avalanche Region of IMPATT Diodes H.K. Gummel, D.L. Scharfetter Bell System Technical Journal Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsResidual Impedance	1966	59
High injection in epitaxial transistors H.C. Poon, H.K. Gummel, D.L. Scharfetter IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	1969	49

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