BSIM: Berkeley short-channel IGFET model for MOS transistors

TLDR

The paper presents the Berkeley short‑channel IGFET model (BSIM), an accurate and computationally efficient MOS transistor model along with its characterization facility for advanced integrated‑circuit design. BSIM incorporates both strong‑ and weak‑inversion drain‑current components, models substrate‑bias dependence with a numerical approximation to accelerate simulation, simplifies terminal‑charge expressions, and derives the charge model from the drain‑current expression to maintain physical consistency. The model guarantees charge conservation.

Abstract

The Berkeley short-channel IGFET model (BSIM), an accurate and computationally efficient MOS transistor model, and its associated characterization facility for advanced integrated-circuit design are described. Both the strong-inversion and weak-inversion components of the drain current expression are included. In order to speed up the circuit-simulation execution time, the dependence of the drain current on the substrate bias has been modeled with a numerical approximation. This approximation also simplifies the transistor terminal-charge expressions. The charge model was derived from its drain-current counterpart to preserve consistency of device physics. Charge conservation is guaranteed in this model.