P.K. Ko - Concepedia

Author

P.K. Ko

University of California, Berkeley

Also Known As

P. K. Ko, P. Ko, P.-K. Ko, P.K. Ko

103

Publications

4.5K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley Semiconductor Manufacturing International (Italy)Hodges University Intel (United States)University of Hong Kong

About

P.K. Ko is an author at University of California, Berkeley specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	51	4.3K
2	Applied Physics	19	27	2.3K
3	Computer Engineering	16	19	1.6K
4	Education	1	1	12
5	Social Sciences	1	1	13

P.K. Ko

Publications

4.4K

Citations

H-Index

Page 1

	Year	Citations
A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors Kuo-Hsiang Hung, P.K. Ko, Chenming Hu, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringNew FormulationEngineeringSemiconductor Device	1990	874
BSIM: Berkeley short-channel IGFET model for MOS transistors B.J. Sheu, D.L. Scharfetter, P.K. Ko, IEEE Journal of Solid-State Circuits Device ModelingElectrical EngineeringEngineeringVlsi DesignNanoelectronics	1987	582
A physics-based MOSFET noise model for circuit simulators Kuo-Hsiang Hung, P.K. Ko, Chenming Hu, IEEE Transactions on Electron Devices Device ModelingCircuit SimulatorsElectrical EngineeringNoise CharacteristicsEngineering	1990	256
A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation F. Assaderaghi, D. Sinitsky, S. Parke, Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignLower Bound	2002	209
Berkeley reliability tools-BERT R. Tu, Elyse Rosenbaum, Wayne Chan, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems Software MaintenanceSoftware Reliability TestingEngineeringSoftware EngineeringPower Electronic Systems	1993	196
A simple method to characterize substrate current in MOSFET's T.Y. Chan, P.K. Ko, Chenming Hu IEEE Electron Device Letters Device ModelingSubstrate Current CharacteristicsElectrical EngineeringEngineeringPhysics	1984	192
An engineering model for short-channel MOS devices K.-Y. Toh, P.K. Ko, Ralf Meyer IEEE Journal of Solid-State Circuits Device ModelingElectrical EngineeringEngineeringCircuit SystemNanoelectronics	1988	160
Dependence of channel electric field on device scaling T.Y. Chan, P.K. Ko, Chenming Hu IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringPhysicsTechnology Scaling	1985	140
High-gain lateral bipolar action in a MOSFET structure S. Verdonckt-Vandebroek, S.S. Wong, J.C.S. Woo, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringMosfet StructureLateral Bipolar ActionElectronic Engineering	1991	107
A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation J.E. Chung, P.K. Ko, Chenming Hu IEEE Transactions on Electron Devices EngineeringPower ElectronicsSemiconductor DeviceMosfet Linear-current DriveNanoelectronics	1991	107

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