The Analysis of Radiation Effects in Semiconductor Junction Devices

Abstract

A computer program has been written for the prediction of transient and permanent radiation damage in junction devices. This program calculates the transient solutions of Poisson's equation and the continuity equations throughout a one-dimensional structure. Mobility, lifetime, and carrier generation are described by nonlinear functions of carrier density and current so that scatter-limiting velocity, Shockley-Read-Hall recombination, and avalanche ionization phenomena are described. Three examples are presented which illustrate the utility of such programs in predicting both ionization and displacement damage effects in a PIN diode and a bipolar transistor.