R. B. Gold - Concepedia

Author

R. B. Gold

Johnson & Johnson (United States)

Also Known As

R. B. Gold, R.B. Gold, Richard B. Gold

Publications

764

Citations

H-Index

Concepts

All Affiliations

Johnson & Johnson (United States)Palo Alto Research Center Stanford University

About

R. B. Gold is an author at Johnson & Johnson (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	720
2	Applied Physics	10	10	692
3	Electrical Engineering	9	9	608
4	Physics	7	7	545
5	Materials Science	4	4	125

R. B. Gold

Publications

730

Citations

H-Index

Page 1

	Year	Citations
Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam Y. I. Nissim, A. Lietoila, R. B. Gold, Journal of Applied Physics Electrical EngineeringEngineeringPhysicsSemiconductor LasersOptical Properties	1980	273
The Matched Feedback Amplifier: Ultrawide-Band Microwave Amplification with GaAs MESFET's K.B. Niclas, W.T. Wilser, R. B. Gold, IEEE Transactions on Microwave Theory and Techniques Positive FeedbackElectrical EngineeringUltrawide-band Amplifier ModuleEngineeringRf Semiconductor	1980	106
Constant-capacitance DLTS measurement of defect-density profiles in semiconductors N. M. Johnson, D. J. Bartelink, R. B. Gold, Journal of Applied Physics SemiconductorsDevice ModelingElectrical EngineeringSemiconductor DeviceDefect Profiling	1979	104
Metastable As-concentrations in Si achieved by ion implantation and rapid thermal annealing A. Lietoila, R. B. Gold, J. F. Gibbons, Journal of Applied Physics EngineeringMetastable As-concentrationsSilicon On InsulatorSemiconductorsIon Implantation	1981	43
Calculation of solid-phase reaction rates induced by a scanning cw laser R. B. Gold, J. F. Gibbons Journal of Applied Physics Engineering’ ’ TeffSolid-phase Reaction RatesLaser ApplicationsLaser Ablation	1980	41
Electronic defect levels in self-implanted cw laser-annealed silicon N. M. Johnson, R. B. Gold, J. F. Gibbons Applied Physics Letters SemiconductorsDeep-level Transient SpectroscopyElectrical EngineeringSemiconductor TechnologyEngineering	1979	38
The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon A. Lietoila, R. B. Gold, J. F. Gibbons Applied Physics Letters Materials ScienceDwell TimeEngineeringCrystalline DefectsCw Laser	1981	28
Electron-beam-induced current investigations of cw laser-annealed silicon M. Mizuta, N.H. Sheng, J. L. Merz, Applied Physics Letters As+-implanted SiElectrical EngineeringIon ImplantationEngineeringElectron-beam-induced Current Investigations	1980	27
Temperature rise induced in Si by continuous xenon arc lamp radiation A. Lietoila, R. B. Gold, J. F. Gibbons Journal of Applied Physics Electrical EngineeringEngineeringHeat SinkPhysicsMicrofabrication	1982	19
A 12-18 GHz medium-power GaAs MESFET amplifier K.B. Niclas, R. B. Gold, W.T. Wilser, IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringRf SemiconductorAmplifier ModulesElectronic Engineering	1978	17

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