Y. I. Nissim

Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam

Y. I. Nissim, A. Lietoila, R. B. Gold et al. · Journal of Applied Physics · 1980 · 273 citations

Electrical Engineering, Engineering, Physics +15

Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures

A. Pépin, C. Vieu, Matthias Schneider et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1997 · 67 citations

Materials Science, Electrical Engineering, Point Defects +13

Impurity-induced enhancement of the growth rate of amorphized silicon during solid-phase epitaxy: A free-carrier effect

Christian Licoppe, Y. I. Nissim · Journal of Applied Physics · 1986 · 45 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Direct measurement of solid-phase epitaxial growth kinetics in GaAs by time-resolved reflectivity

Christian Licoppe, Y. I. Nissim, C. Meriadec · Journal of Applied Physics · 1985 · 34 citations · Full text

Optical Materials, Engineering, Crystal Growth Technology +19

Microprobe Raman analysis of picosecond laser annealed implanted silicon

Y. I. Nissim, J. Sapriel, J Oudar · Applied Physics Letters · 1983 · 26 citations

Optical Materials, Engineering, Laser Science +20