Concepedia

Fermi Level Pinning

Fermi Level Pinning is the phenomenon in semiconductor interfaces where the Fermi level at a metal-semiconductor contact becomes fixed relative to the semiconductor band edges due to the dominance of intrinsic interface states, rather than varying with the work function difference as predicted by ideal Schottky-Mott theory.

1.6K

Publications

93.1K

Citations

5.8K

Authors

1.1K

Institutions

Publications per year

2017–2026

373

Variants

Fermi-level Pinning

Parents

Publications

1.6K

Origin of the Open Circuit Voltage of Plastic Solar Cells

Christoph J. Brabec, Antonio Cravino, Niyazi Serdar Sariçiftçi et al. · Advanced Functional Materials · 2001 · 1.8K citations · Full text

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Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

Heejun Yang, Jinseong Heo, Seongjun Park et al. · Science · 2012 · 953 citations

, , +17

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Chang Sik Kim, Inyong Moon, Daeyeong Lee et al. · ACS Nano · 2017 · 936 citations

, , +17

New and unified model for Schottky barrier and III–V insulator interface states formation

W. E. Spicer, P. W. Chye, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1979 · 930 citations

, , +17

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS<sub>2</sub> Interfaces

Cheng Gong, Luigi Colombo, Robert M. Wallace et al. · Nano Letters · 2014 · 786 citations

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1–5 of 1.6K

Authors

5.8K

  1. WE
    W. E. Spicer

    Stanford University, United States

    36 publications · 3K citations

    22

    h-index

  2. SJ
    S. J. Pearton

    University of Florida, United States

    32 publications · 1.1K citations

    21

    h-index

  3. AY
    A. Y. Polyakov

    University of Florida, United States

    31 publications · 1.1K citations

    20

    h-index

  4. NB
    N. B. Smirnov

    University of Florida, United States

    29 publications · 881 citations

    19

    h-index

  5. RM
    Robert M. Wallace

    The University of Texas at Dallas, United States

    19 publications · 2.5K citations

    18

    h-index

1–5 of 5.8K

Institutions

1.1K

  1. Stanford University

    Stanford, United States

    41 h-index

    389 publications

    31.9K citations

  2. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    37 h-index

    159 publications

    13.4K citations

  3. Centre National de la Recherche Scientifique

    Paris, France

    28 h-index

    173 publications

    8.6K citations

  4. The University of Texas at Austin

    Austin, United States

    22 h-index

    76 publications

    5.6K citations

  5. IMEC

    Leuven, Belgium

    22 h-index

    174 publications

    9.1K citations

  6. University of Florida

    Gainesville, United States

    22 h-index

    76 publications

    3.5K citations

  7. The University of Texas at Dallas

    Richardson, United States

    22 h-index

    78 publications

    9.9K citations

  8. National University of Singapore

    Singapore, Singapore

    21 h-index

    120 publications

    5.5K citations

1–8 of 1.1K

Venues

  1. Applied Physics Letters

    271 publications · 14.5K citations

    61

    h-index

  2. Journal of Applied Physics

    173 publications · 9.2K citations

    49

    h-index

  3. Physical review. B, Condensed matter

    PRB · 97 publications · 6.5K citations

    43

    h-index

  4. Physical Review Letters

    PRL · 46 publications · 5.1K citations

    34

    h-index

  5. Physical Review B

    PRB · 42 publications · 2.7K citations

    31

    h-index

1–5