Concepedia

Wenyuan Sun

WS

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Publications

5

Citations

323

H-Index

5

Active since

2015

Affiliations

The Ohio State University(Current)

Wenyuan Sun is an author at The Ohio State University specializing in semiconductor devices, materials science, and engineering.

Publications per year

2015–2019

5

Publications

5

Breakdown Characteristics of $\beta$ -(Al<sub>0.22</sub>Ga<sub>0.78</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Field-Plated Modulation-Doped Field-Effect Transistors

Chandan Joishi, Yuewei Zhang, Zhanbo Xia et al. · IEEE Electron Device Letters · 2019 · 110 citations

Engineering, Electrical Engineering, Materials Science +12

Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(Al<sub>x</sub>Ga<sub>1–x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Modulation-Doped Field-Effect Transistors

Yuewei Zhang, Zhanbo Xia, Joe F. McGlone et al. · IEEE Transactions on Electron Devices · 2019 · 93 citations

Engineering, Electrical Engineering, Materials Science +14

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong et al. · IEEE Electron Device Letters · 2017 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

Z. Zhang, Esmat Farzana, Wenyuan Sun et al. · Journal of Applied Physics · 2015 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Wenyuan Sun, Jungwoo Joh, S. Krishnan et al. · IEEE Transactions on Electron Devices · 2019 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

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