Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

Yuewei Zhang, Adam T. Neal, Zhanbo Xia, +12

Applied Physics Letters

Materials ScienceOxide HeterostructuresSemiconductorsWide-bandgap SemiconductorEngineering +12

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Michele Esposto, Sriram Krishnamoorthy, Digbijoy N. Nath, +3

Applied Physics Letters

Materials ScienceAl2o3/gan InterfaceElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Delta-doped β-gallium oxide field-effect transistor

Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, +2

Applied Physics Express

Materials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +11

Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Zhanbo Xia, Chandan Joishi, Sriram Krishnamoorthy, +5

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesSub Xmlns +13

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

Sanyam Bajaj, Zhichao Yang, Fatih Akyol, +6

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringImproved CurrentPolarization-doped Field-effect TransistorsEngineering +13

AlGaN channel field effect transistors with graded heterostructure ohmic contacts

Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, +2

Applied Physics Letters

SemiconductorsAluminium NitrideElectrical EngineeringElectronic DevicesEngineering +8

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Sanyam Bajaj, Omor Shoron, Pil Sung Park, +7

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesGan Hemts +12

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

Yuewei Zhang, Zane Jamal-Eddine, Fatih Akyol, +8

Applied Physics Letters

Uv LedsWide-bandgap SemiconductorEngineeringω Cm2Optoelectronic Devices +16

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, +5

Applied Physics Letters

Materials SciencePhotonicsElectrical EngineeringElectronic DevicesUv Leds +13

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong, +9

IEEE Electron Device Letters

Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering +12