Concepedia

Joe F. McGlone

JF

Statistics

Publications

15

Citations

979

H-Index

15

Active since

2018

Affiliations

The Ohio State University(Current)

Indian Institute of Technology Bombay

Joe F. McGlone is an author at The Ohio State University specializing in materials science, engineering, and semiconductor devices.

Publications per year

2018–2023

15

Publications

15

$\beta$ -Ga<sub>2</sub>O<sub>3</sub> Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Zhanbo Xia, Hao Xue, Chandan Joishi et al. · IEEE Electron Device Letters · 2019 · 159 citations

Engineering, Electrical Engineering, Materials Science +17

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga<sub>2</sub>O<sub>3</sub>

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia et al. · physica status solidi (RRL) - Rapid Research Letters · 2020 · 126 citations

Engineering, Materials Engineering, Materials Science +17

Trapping Effects in Si -Doped -Ga<sub>2</sub>O<sub>3</sub> MESFETs on an Fe-Doped -Ga<sub>2</sub>O<sub>3</sub> Substrate

Joe F. McGlone, Zhanbo Xia, Yuewei Zhang et al. · IEEE Electron Device Letters · 2018 · 104 citations · Full text

Engineering, Electrical Engineering, Physics +13

High electron density <i>β</i>-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone et al. · Journal of Applied Physics · 2020 · 99 citations

Engineering, Materials Science, Physics +17

Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(Al<sub>x</sub>Ga<sub>1–x</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Modulation-Doped Field-Effect Transistors

Yuewei Zhang, Zhanbo Xia, Joe F. McGlone et al. · IEEE Transactions on Electron Devices · 2019 · 93 citations

Engineering, Electrical Engineering, Materials Science +14

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