Zixuan Feng

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Md Rezaul Karim et al. · Applied Physics Letters · 2019 · 325 citations

Engineering, Materials Engineering, Materials Science +17

MOCVD epitaxy of <b> <i>β</i> </b>-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson et al. · Applied Physics Letters · 2019 · 136 citations

Natural Sciences, Materials Engineering, Materials Science +17

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia et al. · physica status solidi (RRL) - Rapid Research Letters · 2020 · 126 citations

Engineering, Materials Engineering, Materials Science +17

Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson et al. · APL Materials · 2020 · 124 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium

Lingyu Meng, Zixuan Feng, A F M Anhar Uddin Bhuiyan et al. · Crystal Growth & Design · 2022 · 105 citations

Engineering, Materials Engineering, Materials Science +17