MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Md Rezaul Karim, +1

Applied Physics Letters

Engineeringβ-Ga2o3 Thin FilmsCompensation ConcentrationThin Film Process TechnologySemiconductors +16

MOCVD epitaxy of <b> <i>β</i> </b>-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, +4

Applied Physics Letters

Materials ScienceMaterials EngineeringOxide HeterostructuresEpitaxial GrowthGrowth Temperature +13

Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, +7

APL Materials

Materials ScienceEngineeringCrystalline DefectsPhase TransformationApplied Physics +10

Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, +8

physica status solidi (RRL) - Rapid Research Letters

EngineeringBackground DopingChemistryChemical DepositionCharge Transport +18

MOCVD Epitaxy of Ultrawide Bandgap β-(Al_<i>x</i>Ga_1–<i>x</i>)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, +3

Crystal Growth & Design

Wide-bandgap SemiconductorEngineeringCrystal Growth TechnologyMocvd EpitaxyHigh-al Composition +16

High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium

Lingyu Meng, Zixuan Feng, A F M Anhar Uddin Bhuiyan, +1

Crystal Growth & Design

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringGrowth Rate +11

Full bandgap defect state characterization of <i>β</i>-Ga2O3 grown by metal organic chemical vapor deposition

Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, +6

APL Materials

EngineeringSemiconductorsWide-bandgap SemiconductorsMolecular Beam EpitaxyEpitaxial Growth +15

Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien‐Lien Huang, +3

APL Materials

Materials ScienceEpitaxial GrowthEngineeringCrystalline DefectsM-plane Sapphire Substrates +10

High-temperature low-pressure chemical vapor deposition of β-Ga2O3

Yuxuan Zhang, Zixuan Feng, Md Rezaul Karim, +1

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceMaterials EngineeringHigh Temperature MaterialsRoom Temperature MobilitiesGrowth Temperature +11

Mg acceptor doping in MOCVD (010) <b> <i>β</i> </b>-Ga2O3

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Nidhin Kurian Kalarickal, +2

Applied Physics Letters

Materials EngineeringMaterials ScienceMg AcceptorElectrical EngineeringEngineering +8