Md Rezaul Karim

MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Md Rezaul Karim et al. · Applied Physics Letters · 2019 · 312 citations

Engineering, β-Ga2o3 Thin Films, Compensation Concentration +18

Optical signatures of deep level defects in Ga2O3

Hantian Gao, Shreyas Muralidharan, Nicholas Pronin et al. · Applied Physics Letters · 2018 · 158 citations

Optical Materials, Engineering, Other Semiconductors +19

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

Subrina Rafique, Md Rezaul Karim, Jared M. Johnson et al. · Applied Physics Letters · 2018 · 124 citations

High Resolution, Engineering, β-Ga2o3 Thin Films +17

Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson et al. · APL Materials · 2020 · 121 citations · Full text

Materials Science, Engineering, Crystalline Defects +12

High-temperature low-pressure chemical vapor deposition of β-Ga2O3

Yuxuan Zhang, Zixuan Feng, Md Rezaul Karim et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 63 citations

Materials Science, Materials Engineering, High Temperature Materials +13