Nidhin Kurian Kalarickal

$\beta$ -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Zhanbo Xia, Hao Xue, Chandan Joishi et al. · IEEE Electron Device Letters · 2019 · 159 citations

Engineering, Electrical Engineering, Materials Science +17

High electron density <i>β</i>-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone et al. · Journal of Applied Physics · 2020 · 99 citations

Engineering, Materials Science, Physics +17

β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm

Nidhin Kurian Kalarickal, Zhanbo Xia, Hsien‐Lien Huang et al. · IEEE Electron Device Letters · 2021 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Mg acceptor doping in MOCVD (010) <b> <i>β</i> </b>-Ga2O3

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Nidhin Kurian Kalarickal et al. · Applied Physics Letters · 2020 · 67 citations

Engineering, Materials Engineering, Materials Science +17

β -Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination

Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan et al. · Applied Physics Letters · 2022 · 67 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17