Hsien‐Lien Huang - Concepedia

Author

Hsien‐Lien Huang

The Ohio State University ORCID

Also Known As

H.‐W. HUANG, Hsien-Lien Huang, Hsien‐Lien Huang, Huang, Hsien-Lien

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

The Ohio State University Pennsylvania State University University at Buffalo, State University of New York Kyma Technologies (United States)University of Minnesota

About

Hsien‐Lien Huang is an author at The Ohio State University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	28	1.1K
2	Applied Physics	19	26	1.1K
3	Chemistry	4	4	207
4	Natural Sciences	1	1	29
5	Chemical Engineering	1	1	15

Hsien‐Lien Huang

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
MOCVD epitaxy of <b> <i>β</i> </b>-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Applied Physics Letters Materials ScienceMaterials EngineeringOxide HeterostructuresEpitaxial GrowthGrowth Temperature	2019	131
Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, APL Materials Materials ScienceEngineeringCrystalline DefectsPhase TransformationApplied Physics	2020	121
MOCVD Epitaxy of Ultrawide Bandgap β-(Al<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>)<sub>2</sub>O<sub>3</sub> with High-Al Composition on (100) β-Ga<sub>2</sub>O<sub>3</sub> Substrates A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Crystal Growth & Design Wide-bandgap SemiconductorEngineeringCrystal Growth TechnologyMocvd EpitaxyHigh-al Composition	2020	100
Ga<sub>2</sub>O<sub>3</sub>-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Yiwen Song, Daniel Shoemaker, Jacob H. Leach, ACS Applied Materials & Interfaces	2021	95
β-(Al<sub>0.18</sub>Ga<sub>0.82</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> Double Heterojunction Transistor With Average Field of 5.5 MV/cm Nidhin Kurian Kalarickal, Zhanbo Xia, Hsien‐Lien Huang, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringAverage FieldEngineering	2021	84
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien‐Lien Huang, APL Materials Materials ScienceEpitaxial GrowthEngineeringCrystalline DefectsM-plane Sapphire Substrates	2021	73
Ultra-Wide Band Gap Ga<sub>2</sub>O<sub>3</sub>-on-SiC MOSFETs Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, ACS Applied Materials & Interfaces	2023	63
Thermal Conductivity of β-Phase Ga<sub>2</sub>O<sub>3</sub> and (Al<i><sub><b>x</b></sub></i>Ga<sub>1–</sub><i><sub><b>x</b></sub></i>)<sub>2</sub>O<sub>3</sub> Heteroepitaxial Thin Films Yiwen Song, Praneeth Ranga, Yingying Zhang, ACS Applied Materials & Interfaces	2021	60
Band offsets of (100) <b> <i>β</i> </b>-(AlxGa1−x)2O3/<b> <i>β</i> </b>-Ga2O3 heterointerfaces grown via MOCVD A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Applied Physics Letters Oxide HeterostructuresMaterials ScienceWide-bandgap SemiconductorEngineeringCrystalline Defects	2020	56
MOCVD growth of β-phase (AlxGa1−x)2O3 on (2¯01) β-Ga2O3 substrates A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Applied Physics Letters Materials EngineeringMaterials ScienceMaterial AnalysisEngineeringAl Content	2020	55

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