2008 · 14 citations · 11 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesBuilt-in Self-testCmos Circuit DesignDevice CharacterizationDevice ModelingIntegrated Circuit DesignShort-channel EffectsDevice VariabilityLeakage Current ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMetal-oxide-semiconductor Field-effect Transistor Small-signal ModelsProcess Variation Analysis
A mechanism of DeltaVth variation of NBTI for SRAM load transistor is examined. The variation data is in good agreement with our proposed model. A large fluctuation of NBTI for small size pMOS is not observed in HCI measurement for nMOS, which may be due to the difference of recovery. Two types of equations to get DeltaVth from DeltaIdL by OTF measurement are compared and we have concluded which equation is appropriate by using pulse IV method. We have also proposed a new method to predict precise median value of NBTI for SRAM by OTF measurement with parallel TEG. This method is very important to design initial Vth region of SRAM.
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On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's
M. Denais, A. Bravaix, V. Huard et al. · 2005 · 235 citations
Engineering, Electrical Engineering, Electronic Materials +16
Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric
Chen Shen, M.-F. Li, C. E. Foo et al. · 2006 · 162 citations