Eiichi Murakami

Practical nitric oxide measurement employing a nitric oxide-selective electrode

Koji Ichimori, H. Ishida, Masami Fukahori et al. · Review of Scientific Instruments · 1994 · 181 citations

No Concentration, Engineering, Bioelectronics +12

A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics

N. Suzumura, S. Yamamoto, Daisuke Kodama et al. · 2006 · 106 citations

Electric Field Radice, Engineering, Charge Transport +17

Low Temperature Oxidation of Silicon in a Microwave‐Discharged Oxygen Plasma

Shin’ichiro Kimura, Eiichi Murakami, Kiyoshi Miyake et al. · Journal of The Electrochemical Society · 1985 · 79 citations

Electrical Engineering, Chemical Engineering, Engineering +12

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

Masanobu Miyao, Eiichi Murakami, Hiroyuki Etoh et al. · Journal of Crystal Growth · 1991 · 73 citations

High Hole Mobility, Strained Ge Channel, Electrical Engineering +5

Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation

Keiko Kushida-Abdelghafar, Kikuo Watanabe, Jiro Ushio et al. · Applied Physics Letters · 2002 · 70 citations

Materials Science, Nitrogen Concentration, Semiconductor Technology +12