High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure - Concepedia

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High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

73

Citations

4

References

1991

Year

Masanobu Miyao, Eiichi Murakami, Hiroyuki Etoh, Kiyokazu Nakagawa, Akio Nishida

Journal of Crystal Growth

High Hole MobilityStrained Ge ChannelElectrical EngineeringEngineeringModulation-doped P-si0.5ge0.5/ge/si1−xgex HeterostructureApplied PhysicsSilicon On InsulatorSemiconductor Device

References

	Year	Citations

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