IEEE Transactions on Electron Devices · 2017 · 1.6K citations · 50 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationSemiconductor Device MaterialsSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGallium Nitride Power ElectronicsPower Device ReliabilityPower Electronics DevicesPower MosfetsSilicon Carbide Power DevicesWide Bandgap Semiconductor Applications
Critical issues for commercialization of GaN‑on‑Si power devices include cost, reliability, and ease of use. This paper reviews state‑of‑the‑art GaN‑on‑Si power‑electronics device technology and its application development. The review covers normally‑off device technologies for power switching and compares them with Si superjunction‑MOSFET and SiC MOSFET. The paper demonstrates circuit applications that benefit from the superior performance of GaN power devices.
In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
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GaN on Si Technologies for Power Switching Devices
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