Yoshiharu Anda

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda et al. · 2011 · 152 citations

Electrical Engineering, Gate Injection Transistor, Engineering +13

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Journal of Applied Physics · 2017 · 90 citations

Materials Engineering, Materials Science, Chemical Engineering +15

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

S. Makioka, Yoshiharu Anda, K. Miyatsuji et al. · IEEE Transactions on Electron Devices · 2001 · 54 citations

Low-power Electronics, Electrical Engineering, Engineering +13

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda et al. · 2010 · 49 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters

Tatsuo Morita, Shinji Ujita, Hidekazu Umeda et al. · 2012 · 34 citations

Electrical Engineering, Semiconductor Device, Engineering +12