Yoshiharu Anda

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda et al. · 2011 · 152 citations

Engineering, Electrical Engineering, Microelectronics +16

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Joyo Ito, Ryohei Asahara et al. · Journal of Applied Physics · 2017 · 94 citations

Natural Sciences, Materials Engineering, Materials Science +17

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

S. Makioka, Yoshiharu Anda, K. Miyatsuji et al. · IEEE Transactions on Electron Devices · 2001 · 54 citations

Engineering, Electrical Engineering, Microelectronics +16

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda et al. · 2010 · 49 citations

Engineering, Electrical Engineering, Materials Science +17

GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters

Tatsuo Morita, Shinji Ujita, Hidekazu Umeda et al. · 2012 · 34 citations

Engineering, Electrical Engineering, Materials Engineering +17