Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda, +13

Applied Physics Letters

Electrical EngineeringElectroluminescence StudyEngineeringNanoelectronicsElectronic Engineering +11

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi, +8

Electrical EngineeringSi SubstrateEngineeringPlanar IsolationNanoelectronics +8

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda, +4

Dc-dc Converter IcElectrical EngineeringGate DriversEngineeringPower Ic +10

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, +4

Wide-bandgap SemiconductorElectrical EngineeringEngineeringBlocking-voltage Boosting TechnologyNanoelectronics +10

High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Hidekazu Umeda, Yasuhiro Yamada, Asanuma Ken-ichi, +6

Electrical EngineeringEngineeringPower DeviceHigh PowerPower Electronics Converter +8

Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Kenichiro Tanaka, Hidekazu Umeda, Hidetoshi Ishida, +2

Japanese Journal of Applied Physics

Device ModelingRoom TemperatureElectrical EngineeringWide-bandgap SemiconductorEngineering +13

GaN Gate Injection Transistor with integrated Si Schottky barrier diode for highly efficient DC-DC converters

Tatsuo Morita, Shinji Ujita, Hidekazu Umeda, +5

Electrical EngineeringSemiconductor DeviceEngineeringEpitaxial GrowthPower Device +10

High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN Transistors

Hidekazu Umeda, Toshiyuki Takizawa, Yoshiharu Anda, +2

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringIon Implantation +11

A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters

Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda, +5

Electrical EngineeringGate DriversEngineeringPower IcPower Device +12

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, +9

Wide-bandgap SemiconductorThick Gan BufferElectrical EngineeringEngineeringApplied Physics +9