Hidekazu Umeda

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 132 citations

Electrical Engineering, Electroluminescence Study, Engineering +13

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi et al. · 2009 · 84 citations

Electrical Engineering, Si Substrate, Engineering +10

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda et al. · 2014 · 78 citations

Dc-dc Converter Ic, Electrical Engineering, Gate Drivers +12

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda et al. · 2010 · 49 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Hidekazu Umeda, Yasuhiro Yamada, Asanuma Ken-ichi et al. · 2018 · 45 citations

Electrical Engineering, Engineering, Power Device +10