Ayanori Ikoshi

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Saichiro Kaneko, Masayuki Kuroda, Manabu Yanagihara et al. · 2015 · 190 citations

Engineering, Electrical Engineering, Microelectronics +13

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 136 citations

Engineering, Electrical Engineering, Circuit Theory +13

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi et al. · 2009 · 84 citations

Engineering, Electrical Engineering, Microelectronics +14

Reliability of hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Masahiro Ishida et al. · 2017 · 64 citations

Engineering, Electrical Engineering, Microelectronics +15

Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

Hideyuki Okita, Masahiro Hikita, Akihiko Nishio et al. · IEEE Transactions on Electron Devices · 2017 · 33 citations

Engineering, Electrical Engineering, Materials Science +13