Manabu Yanagihara

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno et al. · IEEE Transactions on Electron Devices · 2007 · 980 citations

Wide-bandgap Semiconductor, Electron Density, Electrical Engineering +10

Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain

Saichiro Kaneko, Masayuki Kuroda, Manabu Yanagihara et al. · 2015 · 186 citations

Electrical Engineering, Gate Injection Transistor, Engineering +10

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 132 citations

Electrical Engineering, Electroluminescence Study, Engineering +13

650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Tatsuo Morita, Manabu Yanagihara, Hidetoshi Ishida et al. · 2007 · 106 citations

Electrical Engineering, Engineering, Electronic Engineering +10

Recent advances in GaN transistors for future emerging applications

Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda et al. · physica status solidi (a) · 2009 · 97 citations

Electrical Engineering, Epitaxial Growth Technology, Engineering +13