650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Abstract

We report a normally-off GaN-based monolithic bidirectional switch for the first time. The switch consists of a double-gate AlGaN/GaN gate injection transistor (GIT) which serves normally-off operation with high drain current utilizing the hole injection from the p-type gate. The fabricated bidirectional switch exhibits high breakdown voltage of 650 V for both polarities and low on-state resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.</sup> A) of 3.1 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The GaN-based bidirectional switch can be applied to AC-AC matrix converters with high efficiency.