Hidetoshi Ishida

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno et al. · IEEE Transactions on Electron Devices · 2007 · 998 citations

Engineering, Electrical Engineering, Materials Science +14

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda et al. · Applied Physics Letters · 2015 · 136 citations

Engineering, Electrical Engineering, Circuit Theory +13

650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor

Tatsuo Morita, Manabu Yanagihara, Hidetoshi Ishida et al. · 2007 · 115 citations

Engineering, Electrical Engineering, Circuit Theory +11

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

Yasuhiro Uemoto, Daisuke Shibata, Manabu Yanagihara et al. · 2007 · 92 citations

Engineering, Electrical Engineering, Materials Science +17

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Mattia Guacci, Daifei Zhang, Mina Tatic et al. · CPSS Transactions on Power Electronics and Applications · 2019 · 85 citations · Full text

Engineering, Electrical Engineering, Circuit Theory +16